AO4840 40v dual n-channel mosfet general description product summary v ds i d (at v gs =10v) 6a r ds(on) (at v gs =10v) < 30m w r ds(on) (at v gs =4.5v) < 38m w 100% uis tested 100% r g tested symbol v ds the AO4840 uses advanced trench technology mosfets to provide excellent r ds(on) and low gate charge. this dual device is suitable for use as a l oad switch or in pwm applications. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 40v drain-source voltage 40 g2 d2 s2 g1 d1 s1 g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 86 7 top view soic-8 top view bottom view pin1 v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl mj junction and storage temperature range -55 to 150 c power dissipation b p d avalanche energy l=0.1mh c 74 62.5 a i d 6 units thermal characteristics parameter typ max v drain-source voltage 40 pulsed drain current c continuous drain current t a =70c 1.3 v 20 gate-source voltage 5 30 32 90 10 a 14 t a =25c t a =70c c/w r q ja 48 40 maximum junction-to-ambient a t a =25c avalanche current c w 2 maximum junction-to-lead c/w c/w maximum junction-to-ambient a d rev 5: august 2011 www.aosmd.com page 1 of 5
AO4840 symbol min typ max units bv dss 40 v v ds =40v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.7 2.5 3 v i d(on) 30 a 24 30 t j =125c 36 45 30 38 m w g fs 27 s v sd 0.76 1 v i s 2 a c iss 410 516 650 pf c oss 55 82 110 pf c rss 25 43 60 pf r g 2.3 4.6 6.9 w q g (10v) 8.9 10.8 nc q g (4.5v) 4.3 5.6 nc q gs 2.4 nc q gd 1.4 nc t d(on) 6.4 ns t 3.6 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time v =10v, v =20v, r =3.3 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =10v, v ds =20v, i d =6a gate source charge gate drain charge total gate charge r ds(on) static drain-source on-resistance m w i s =1a,v gs =0v v ds =5v, i d =6a v gs =4.5v, i d =5a v ds =v gs i d =250 m a v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current forward transconductance diode forward voltage electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =6a reverse transfer capacitance v gs =0v, v ds =20v, f=1mhz switching parameters t r 3.6 ns t d(off) 16.2 ns t f 6.6 ns t rr 18 24 ns q rr 10 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =6a, di/dt=100a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =20v, r l =3.3 w , r gen =3 w turn-off fall time body diode reverse recovery time i f =6a, di/dt=100a/ m s a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150 c. ratings are based on low frequency and duty cycl es to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150 c. the soa curve provides a single pulse rating. rev 5: august 2011 www.aosmd.com page 2 of 5
AO4840 typical electrical and thermal characteristics 17 52 10 0 18 0 10 20 30 40 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 20 25 30 35 40 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 2.2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =5a v gs =10v i d =6a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 10 20 30 40 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =3.5v 5v 10v 4.5v 4v 40 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c (note e) 20 30 40 50 60 70 80 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =6a 25 c 125 c rev 5: august 2011 www.aosmd.com page 3 of 5
AO4840 typical electrical and thermal characteristics 0 2 4 6 8 10 0 2 4 6 8 10 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30 35 40 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =20v i d =6a 1 10 100 1000 10000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - to - t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms figure 10: single pulse power rating junction - to - ambient (note f) operating area (note f) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse rev 5: august 2011 www.aosmd.com page 4 of 5
AO4840 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar vdd vgs vgs rg dut - + vdc vgs id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr rev 5: august 2011 www.aosmd.com page 5 of 5
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